Package of light emitting diode and method for manufacturing the same

ABSTRACT

Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

CROSS-REFERENCE FOR RELATED APPLICATIONS

This application is a Continuation of co-pending U.S. patent applicationSer. No. 12/162,105 filed on Jul. 24, 2008, which is the national phaseof PCT International Application No. PCT/KR2007/000381 filed on Jan. 23,2007, and which claims priority to Application No. 10-2006-0008158 filedin the Republic of Korea on Jan. 26, 2006. The entire content of all ofthe above applications is hereby incorporated by reference.Thisapplication is a reissue application of U.S. application Ser. No.13/052,587, filed Mar. 21, 2011 and issued as U.S. Pat. No. 8,217,413 onJul. 10, 2012, which is a continuation of U.S. patent application Ser.No. 12/162,105 filed on Jul. 24, 2008 and issued as U.S. Pat. No.7,935,976 on May 3, 2011, which is the national phase of PCTInternational Application No. PCT/KR2007/000381 filed on Jan. 23, 2007,and which claims priority to Application No. 10-2006-0008158 filed inthe Republic of Korea on Jan. 26, 2006. The entire content of all of theabove applications is hereby incorporated by reference.

TECHNICAL FIELD

The present invention relates to a package of a light emitting diode,and a method for manufacturing the same.

BACKGROUND ART

An example of a related art light-emitting diode (LED) module is formedas illustrated in FIG. 1. As for the related art LED module of FIG. 1,each of LED chips corresponding to a red LED 2, a green LED 3 and a blueLED 4 respectively is mounted in one independent package. The package ismolded with lens-shaped epoxy to form an individual device as a module.

An example of a related art LED packaging method includes a method offlip-bonding a light-emitting diode chip on a submount of a siliconoptical bench (SIOB), or a method of using a metal core printed circuitboard (MCPCB).

The MCPCB refers to a chip on board (COB) structure where an LED chip isdirectly die-bonded to a printed circuit board (PCB), and then wirebonding is performed thereon for electrical connection.

However, in the case where the MCPCB is used among COB type packagesaccording to the related art, an insulating layer is provided on thethick MCPCB. Here, since a lower metal of the MCPCB is flexible whilehaving a thick thickness, deformation may occur when the MCPCB ispressed, a defective rate thus increases, and inconvenience is caused inhandling the MCPCB during a process operation.

Also, the thick thickness of the lower metal of the MCPCB according tothe related art undesirably obstructs formation of a slim package

Furthermore, since the LED chip does not directly contact a metal plateaccording to the related art, heat generated from the LED chip cannot besufficiently released.

DISCLOSURE OF INVENTION Technical Problem

The present invention provides an LED package and a method formanufacturing the same, which can satisfy demands for a slim package byproviding a surface mounting type LED package capable of solvingdisadvantages, such as a thick MCPCB, of the related art LED package.

Technical Solution

In one embodiment of the present invention, there is provided a packageof a light emitting diode including: a metal plate; a light-emittingdiode chip surface-mounted on the metal plate; an insulating layer onthe metal plate, the insulating layer separated from the light-emittingdiode chip; a lead frame on the insulating layer; a reflective coatinglayer on the lead frame; and a molding material molding thelight-emitting diode chip in a predetermined shape.

In another embodiment of the present invention, there is provided amethod for manufacturing a package of a light-emitting diode, including:forming an insulating layer under a lead frame; forming a light-emittingdiode mounting region in the lead frame and the insulating layer;forming a metal plate under the insulating layer in which thelight-emitting diode mounting region is formed; forming a reflectivecoating layer on the lead frame; surface-mounting a light-emitting diodechip on the metal plate in the mounting region; and performing moldingon the light-emitting diode chip.

In another embodiment, there is provided a package of a light emittingdiode, the package comprising: a base layer; a light emitting diode chipon the base layer; a lead frame electrically connected to the lightemitting diode chip; a reflective coating layer directly on the leadframe; and a molding material covering the light emitting diode chip ina predetermined shape, wherein a bottom surface of the reflectivecoating layer is positioned higher than a bottom surface of the lightemitting diode chip, wherein the lead frame includes at least one endportion that is not covered with the reflective coating layer, the atleast one portion of the lead frame being adjacent to the light emittingdiode chip, and wherein a bottom surface of the reflective coating layeris substantially parallel to a top surface of the base layer.

In another embodiment, there is provided a display device: comprising apackage of a light emitting diode, the package including a base layer; alight emitting diode chip on the base layer; a lead frame electricallyconnected to the light emitting diode chip; a reflective coating layerdirectly on the lead frame; and a molding material covering the lightemitting diode chip in a predetermined shape, wherein a bottom surfaceof the reflective coating layer is positioned higher than a bottomsurface of the light emitting diode chip, wherein the lead frameincludes at least one end portion that is not covered with thereflective coating layer, the at least one portion of the lead framebeing adjacent to the light emitting diode chip, and wherein a bottomsurface of the reflective coating layer is substantially parallel to atop surface of the base layer.

Advantageous Effects

An LED package and a method for manufacturing the same according to thepresent invention can meet demands for a slim package by using a thinmetal plate and thus considerably reducing a thickness of a PCB.

Also, according to the present invention, since an LED chip is mountedon the metal plate, heat generated from the LED chip is directlyconducted to the metal plate, and thus effective heat release can beachieved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an exemplary view of a related art LED package; and

FIGS. 2 through 5 are cross-sectional views of a method formanufacturing an LED package according to an embodiment of the presentinvention.

MODE FOR THE INVENTION

An LED package and a method for manufacturing the same according to anembodiment of the present invention will now be described in detail withreference accompanying drawings.

It will be understood that when a layer (or film) is referred to asbeing ‘on’ or ‘under’ another layer or substrate, it can be directly onor under the other layer or substrate, or intervening layers may also bepresent.

FIGS. 2 through 5 are cross-sectional views of a method formanufacturing an LED package according to an embodiment of the presentinvention.

Referring to FIG. 2, an insulating layer 32 is attached to a lead frame33.

The lead frame 33 is formed of a copper alloy, and may include a circuitwith a predetermined pattern.

Also, the insulating layer 32 may be formed of a glass epoxy-basedmaterial, for example, a flame retardant-4 (FR-4) resin 32. Here, theFR-4 resin 32 is an insulator made of a dielectric resin, and has a highmechanical strength and excellent durability, thereby experiencing justsmall thermal deformation even if the FR-4 resin 32 has a thinthickness. Also, the FR-4 resin 32 is a proper material for formation ofmultiple layers because of its adhesiveness.

When the FR-4 resin 32 is attached to a surface of the lead frame 33using a press or a thermo-compression jig, the FR-4 resin 32 is attachedthereto by heat applied by the press or the thermo-compression jigbecause of the adhesiveness of the FR-4 resin 32.

Referring to FIG. 3, an LED mounting region is formed in the lead frame33 and the FR-4 resin 32.

Specifically, the FR-4 resin 32 and the lead frame 33 that are attachedtogether are punched by a mechanical method, for example, a drillingmachine, to for iii a space where an LED chip 35 of FIG. 5 is to bemounted.

Here, an attached plate of the FR-4 resin 32 and the lead frame 33 maybe punched to form an LED mounting space having a cylindrical shape or aquadrangle-shaped container.

Instead, a punched section of the FR-4 resin 32 and the lead frame 33may be an inclined surface that is tapered from the lead frame 33 towardthe FR-4 resin 32

Then, referring to FIG. 3, a metal plate 31 is high-temperaturecompressed and attached to a lower surface of the FR-4 resin 32.

Here, the metal plate 31 may be formed of a metal material havingthermal conductivity, such as aluminum (Al) and silver (Au).

Since the metal plate 31 is thinner than that of the related art, themetal plate 31 contributes to considerably reducing the thickness of thePCB to meet demands for a slim package.

For example, the metal plate 31 has a thickness ranging from about 25 Dto about 75 D, and acts as a heat sink. Also, as the LED chip 35 of FIG.5 is mounted on the metal plate 31, so that the demands for the slimnessof the LED package can be satisfied.

Also, when the metal plate 31 is high-temperature compressed andattached to the lower surface of the FR-4 resin 32, the press or thethermo-compression jig may be used in the same manner as when the FR-4resin 32 and the lead frame 33 are attached together.

Then, referring to FIG. 4, a reflective coating layer 34 is formed on anupper surface of the lead frame 33.

Here, the reflective coating layer 34 may be formed of a material withhigh reflectance in order to improve brightness of light emitted fromthe LED chip 35.

The reflective coating layer 34 may include a white resin includingtitanium oxide and resin as main components and formed by mixing calciumcarbonate, barium sulfate, zinc oxide, or the like.

Also, the reflective coating layer 34 may be formed using a whitepigment besides the white resin.

In the present invention, a screen printing method, not a related artpneumatic dispensing method which has been widely used, is proposed as amethod for applying the white resin for the reflective coating layer 34.

As compared to the related art pneumatic dispensing method, the screenprinting method can apply the white resin to a relatively large areawithin a short period of time, and requires a small equipment investmentcost.

A screen mask (not shown) having a thickness of, for example, 50 D, isformed on a punched portion of the FR-4 resin 32 and the lead frame 33,specifically, on a space in which the LED chip 35 is to be mounted.Thereafter, a portion excluding the screen mask is filled with the whiteresin using a squeeze (not shown).

Specifically, the squeeze moves along an upper surface of the screenmask while rubbing a liquid white resin in a preset direction, so thatthe portion excluding the screen mask can be filled with the liquidwhite resin.

After the portion excluding the screen mask is filled with the liquidwhite resin, the screen mask is removed, and annealing is performed at apreset temperature to cure the white resin, and a surface of the whiteresin is planarized on the same level as the upper surface of the screenmask.

Then, referring to FIG. 5, the LED chip 35 is mounted on the metal plate31 in the mounting space.

The LED chip 35 is mounted on the metal plate 31 using paste (not shown)having thermal conductivity, and the LED chip 35 and the lead frame 33can be electrically connected using a wire 36.

Also, in the present invention, the LED chip may be flip-bonded to asilicon optical bench (SIOB) (not shown), the SIOB to which the LED chipflip-bonded has been flip-bonded may be mounted on the metal plate 31,and electrical connection therebetween may be made using a wire.

After the LED chip 35 is mounted, an epoxy resin, as a molding material37, is injected for molding to a space encompassed by the FR-4 resin 32,the lead frame 33 and the reflective coating layer 34 over the LED chip35.

A surface mounting type LED package formed in the above-described mannercan meet the demands for a slim package since a thin metal layer havinga thickness ranging from about 25 D to 75 D is used, and thus a thinthickness of about 0.6 mm to about 0.4 mm is implemented between thereflective coating layer 34 and the metal plate 31.

Also, according to the present invention, since the LED chip is mountedon the metal plate, heat generated from the LED chip can be directlyconducted to the metal plate, thereby achieving effective heat-release.

INDUSTRIAL APPLICABILITY

It will be apparent to those skilled in the art that variousmodifications and variations can he made in the present invention. Thus,it is intended that the present invention covers the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

Specifically, although one LED chip is taken as an example fordescribing a surface mounting type LED package according to the presentinvention, the present invention is not limited thereto, and a pluralityof packages each including a plurality of LED chips can be implementedand used for a backlight unit of a liquid crystal display (LCD) device.

What is claimed is:
 1. A package of a semiconductor light emittingdiode, the package comprising: a base layer; a semiconductor lightemitting diode chip on the base layer; a lead frameat least two leadframes electrically connected to the semiconductor light emitting diodechip; a first portion of a reflective coating layer directly on the leadframe at least two lead frames; and a molding material covering thesemiconductor light emitting diode chip in a predetermined shape,wherein a bottom surface of a second portion of the reflective coatinglayer is positioned higher than a bottom surface of the semiconductorlight emitting diode chip, wherein each top surface of the at least twolead frames are a same height, wherein each bottom surface of the atleast two lead frames are lower than a top surface of the semiconductorlight emitting diode chip, wherein the lead frame at least one of the atleast two lead frames includes at least one end portion that is notcovered with the reflective coating layer, the at least one end portionof the lead frame being adjacent to the semiconductor light emittingdiode chip, wherein a the bottom surface of the second portion of thereflective coating layer is substantially parallel to a top surface ofthe base layer, wherein a thickness from the bottom surface of thesecond portion of the reflective coating layer to a topmost surface ofthe second portion of the reflective coating layer is thinner than athickness from the bottom surface of the semiconductor light emittingdiode chip to a topmost surface of the semiconductor light emittingdiode chip, and wherein the reflective coating lager comprises a whiteresin including at least one of titanium oxide, calcium carbonate, orbarium sulfate, and zinc oxide wherein an uppermost portion of themolding material covering the semiconductor light emitting diode chip isdisposed higher than an uppermost portion of the reflective coatinglayer, wherein the molding material directly contacts at least a portionof the reflective coating layer, wherein a bottommost surface of thereflective coating layer is positioned higher than a topmost surface ofthe semiconductor light emitting diode chip, wherein a contact surfacebetween the reflective coating layer and the at least two lead frames ispositioned higher than the topmost surface of the semiconductor lightemitting diode chip, wherein the bottommost surface of the reflectivecoating layer is positioned higher than topmost surfaces of the at leasttwo lead frames, and wherein the topmost surfaces of the at least twolead frames are positioned higher than the topmost surface of thesemiconductor light emitting diode chip.
 2. The package according toclaim 1, wherein the base layer comprises a metal.
 3. The packageaccording to claim 1, further comprising: an insulating layer on thebase layer, wherein the insulating layer comprises a flameretardant-resin.
 4. The package according to claim 1, wherein ends ofthe lead frame at least two lead frames and ends of the reflectivecoating layer are aligned with each other.
 5. The package according toclaim 1, wherein ends of the reflective coating layer and base layer arealigned with each other.
 6. The package according to claim 1, wherein anentire top surface of the base layer is substantially flat.
 7. Thepackage according to claim 1, wherein the bottom surface of the secondportion of the reflective coating layer is positioned higher than thetopmost surface of the semiconductor light emitting diode chip.
 8. Adisplay device comprising: a package of a semiconductor light emittingdiode, the package including a base layer; a semiconductor lightemitting diode chip on the base layer; a lead frameat least two leadframes electrically connected to the semiconductor light emitting diodechip; a first portion of a reflective coating layer directly on the leadframethe at least two lead frames; and a molding material covering thesemiconductor light emitting diode chip in a predetermined shape,wherein a bottom surface of a second portion of the reflective coatinglayer is positioned higher than a bottom surface of the semiconductorlight emitting diode chip, wherein each top surface of the at least twolead frames are a same height, wherein each bottom surface of the atleast two lead frames are lower than a top surface of the semiconductorlight emitting diode chip, wherein the lead frame at least one of thetwo lead frames includes at least one end portion that is not coveredwith the reflective coating layer, the at least one end portion of thelead frame being adjacent to the semiconductor light emitting diodechip, wherein a the bottom surface of the second portion of thereflective coating layer is substantially parallel to a top surface ofthe base layer, wherein a thickness from the bottom surface of thesecond portion of the reflective coating layer to a topmost surface ofthe second portion of the reflective coating layer is thinner than athickness from the bottom surface of the semiconductor light emittingdiode chip to a topmost surface of the semiconductor light emittingdiode chip, and wherein the reflective coating layer comprises a whiteresin including at least one of titanium oxide, calcium carbonate, orbarium sulfate, and zinc oxide wherein an uppermost portion of themolding material covering the semiconductor light emitting diode chip isdisposed higher than an uppermost portion of the reflective coatinglayer, wherein the molding material directly contacts at least a portionof the reflective coating layer, wherein a bottommost surface of thereflective coating layer is positioned higher than a topmost surface ofthe semiconductor light emitting diode chip, wherein a contact surfacebetween the reflective coating layer and the at least two lead frames ispositioned higher than the topmost surface of the semiconductor lightemitting diode chip, wherein the bottommost surface of the reflectivecoating layer is positioned higher than topmost surfaces of the at leasttwo lead frames, and wherein the topmost surfaces of the at least twolead frames are positioned higher than the topmost surface of thesemiconductor light emitting diode chip.
 9. The display device accordingto claim 8, wherein the base layer comprises a metal.
 10. The displaydevice according to claim 8, the package further comprising: aninsulating layer on the base layer and wherein the insulating layercomprises a flame retardant-4 resin.
 11. The display device according toclaim 8, wherein ends of the lead frame at least two lead frames andends of the reflective coating layer are aligned with each other. 12.The display device according to claim 8, wherein ends of the reflectivecoating layer and base layer are aligned with each other.
 13. Thedisplay device according to claim 8, wherein an entire top surface ofthe base layer is substantially flat.
 14. The display device accordingto claim 8, wherein the bottom surface of the second portion of thereflective coating layer is positioned higher than the topmost surfaceof the semiconductor light emitting diode chip.
 15. The packageaccording to claim 1, wherein a topmost surface of one of the at leasttwo lead frames is positioned higher than the topmost surface of thesemiconductor light emitting diode chip.
 16. The package according toclaim 1, wherein a surface of the reflective coating layer is notcorresponded to a side surface of the semiconductor light emitting diodechip.
 17. The display device according to claim 8, wherein a height froma top surface of the reflective coating layer to a top point of themolding material is two times higher than a thickness of the reflectivecoating layer.
 18. The display device according to claim 8, wherein atopmost surface of one of the at least two lead frames is positionedhigher than the topmost surface of the semiconductor light emittingdiode chip.
 19. The display device according to claim 8, wherein asurface of the reflective coating layer is not corresponded to a sidesurface of the semiconductor light emitting diode chip.